Allicdata Part #: | 497-4376-5-ND |
Manufacturer Part#: |
STP20NM60A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 20A TO-220 |
More Detail: | N-Channel 650V 20A (Tc) 192W (Tc) Through Hole TO-... |
DataSheet: | STP20NM60A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 192W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1630pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STP20NM60A is a common three-terminal power MOSFET device used in a wide array of power circuit applications. It has a variety of advantages in terms of low Gate Charge, low on-state resistance, fast switching and excellent thermal stability making it a suitable choice for many different applications.
The STP20NM60A is a N-channel type MOSFET for use as a switch in power circuits. It is also known as an enhancement type MOSFET because its on state results from applying a significant gate-source voltage. The primary application field of the STP20NM60A includes motor control, solid-state relays, power supplies and DC/DC converters.
The working principle of the STP20NM60A can be explained as follows. The basic structure of the device consists of an insulated gate region, a source region and a drain region, through which majority carriers flow. When no voltage is applied between the gate and the source of the MOSFET, the device is said to be in the off-state and due to the reverse bias breakdown between the gate and channel, no current flows between the source and drain. When a positive voltage is applied between the gate and source of the MOSFET, a strong electric field forms between the gate and the channel region which attracts mobile electrons into the channel region.
These electrons, called majority carriers, form a low resistance path between the drain and the source. This low resistance connects the drain and the source, allowing large currents to flow between them. When the voltage between the gate and source is decreased enough, the conductive channel disappears, thus turning off the device.
The STP20NM60A is a high-speed device with an extremely low on-state resistance which minimizes the power dissipation and optimizes the power efficiency of the circuit. The low input capacitance of the device ensures that it can switch at high frequencies and its temperature coefficient of on-state resistance ensures its temperature stability.
The STP20NM60A is a highly reliable device with excellent thermal stability, making it suitable for a range of high-power applications. The three-terminal nature of the device also allows for easy circuit integration and connection of other components, thus making it an ideal choice for a range of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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