STP26N60M2 Allicdata Electronics
Allicdata Part #:

STP26N60M2-ND

Manufacturer Part#:

STP26N60M2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CHANNEL 600V 20A TO220
More Detail: N-Channel 600V 20A (Tc) 169W (Tc) Through Hole TO-...
DataSheet: STP26N60M2 datasheetSTP26N60M2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: MDmesh™ M2
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): 169W (Tc)
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

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The STP26N60M2 is a type of metal–oxide–semiconductor field-effect transistor (MOSFET). It belongs to the metal-oxide-semiconductor field-effect family of transistor devices which are designed to provide efficient insulation between an input signal and output device. The STP26N60M2 is considered to be ideal for high power applications, due to its high current-handling capability, low on-resistance and cost effectiveness.

The STP26N60M2 is a single N-channel MOSFET, which is suitable for a wide range of applications. It is typically used in high power switching circuits, such as motor drives, server power supplies and AC/DC power applications. It can be used in a variety of applications where a high switching rate, high voltage and high current-handling capabilities are needed. It can also be used for high-frequency switching, such as in D/A converters and digital circuits.

The working principle of the STP26N60M2 enables it to provide low on-resistance and high current-handling capabilities. It utilizes a drain-source current flow through the device in order to control the output. Depending on the gate voltage, this current flow can be altered or turned off completely, allowing for the device to be used as either an amplifier or a switch. When the gate voltage is increased, the current flow will be blocked and the device can act as a switch by providing a complete break in the circuit. When the gate voltage is decreased, the current flow will be allowed and the device can act as an amplifier.

The STP26N60M2 is a high current-handling device, meaning that it is capable of handling more power than other MOSFETs. This makes the device suitable for applications where high currents are needed, such as electric motor control, power supply switching, and high voltage power supplies. The device also provides excellent RDS (on) and RDS (off) capabilities, providing a high switching rate and low on-state power dissipation, making it ideal for power management applications.

The STP26N60M2 is an ideal choice for applications which require high current-handling capabilities, low on-resistance, and cost effectiveness. Its ability to provide excellent RDS (on) and RDS (off) capabilities make it an ideal choice for high-frequency switching, such as in digital circuits and D/A converters. Due to its high current-handling capability and low on-resistance, it can also be used in a variety of applications where high voltage and high power switching is desired, such as motor drives and server power supplies. In addition, the STP26N60M2 can be used in a wide range of applications, making it a versatile and cost-effective device.

The specific data is subject to PDF, and the above content is for reference

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