Allicdata Part #: | 497-9095-5-ND |
Manufacturer Part#: |
STP27N3LH5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 27A TO220 |
More Detail: | N-Channel 30V 27A (Tc) 45W (Tc) Through Hole TO-22... |
DataSheet: | STP27N3LH5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 475pF @ 25V |
Vgs (Max): | ±22V |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 5V |
Series: | STripFET™ V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP27N3LH5 is a dual N-channel insulated gate field effect transistor, also known as an Insulated Gate Bipolar Transistor or IGBT. It is an all-surface channel transistor, which, when compared to its predecessors, is much faster, more reliable, and more efficient. It is widely used in applications such as amplifiers, motor control, and power electronics.
This transistor is composed of two P-type substrate layers and two layers of N type semiconductors. The gate is then insulated from the P-type substrate by a gate oxide layer, which is responsible for controlling the amount of current that can flow through the device. This transistor can be used in both unipolar and complementary configurations, depending on the application.
At the heart of the STP27N3LH5 lies the ability to switch large amounts of power with low losses and low temperature rise. This is possible due to its very low on-state resistance, RDS(on). This allows the transistor to operate at high frequencies while dissipating little power. The RDS(on) is also very low, making the transistor suitable for applications requiring very high power.
The STP27N3LH5 is mainly used as switches in power electronic applications. Its ability to switch large amounts of power, with low losses and low temperature rise makes it particularly suitable for applications such as motor control and inverters. It can also be used in circuit breakers to protect the power supply from over-current or short-circuit conditions.
As well as being used as a switch, it is possible to use the STP27N3LH5 in other configurations. It is possible to use it as a current limiter, by using the body-diode characteristics. This is especially useful in applications such as LED lighting, where current is limited and the cost of a dedicated current limiter is higher.
In addition, the STP27N3LH5 can be operated as a linear regulator using its transconductance gain. This makes it possible to regulate the voltage and current in applications such as power supplies and other linear converters. This is especially useful in applications where a microcontroller or other device is used to control the output voltage.
Finally, the STP27N3LH5 is also suitable for applications requiring high-frequency operation, such as Class-D audio amplifiers. This is possible due to its low threshold voltage, resulting in faster switching speeds and higher frequencies.
In conclusion, the STP27N3LH5 is a versatile device, with a wide range of possible applications. It is an excellent choice for applications where high speed, low losses, and low temperature rise are important. It is also suitable for use in sensitive power control circuits and applications requiring high-frequency operation. Its low cost, small size, and versatility make it an attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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