STP25N60M2-EP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP25N60M2-EP is a high-power MOSFET, designed with a state-of-the-art power process technology. It is a n-channel device, capable of good switching performance, low on-resistance, and low gate-charge. It is suitable for applications such as power converters, motor drives, and power supply circuits.

The STP25N60M2-EP provides excellent performances in terms of RDS(on) temperature coefficient as well as withstand voltage ruggedness. Its low package profile improves system efficiency and reduces power losses. It also features a gate-to-source voltage: 20V ±10%.

The STP25N60M2-EP is suitable for power factor correction circuits and applications with high switching frequency and EMI. The device has an extremely low specific on-resistance of 0.02 Ω (max), excellent switching performance, with low gate-charge and low output capacitance.

The STP25N60M2-EP is made up of two key components: the source and drain. The source is the area where the current enters the device, while the drain is the area which receives the current. The source and drain are connected to the gate through an insulated gate, which allows the device to either conduct or block the current depending on the voltage on the gate.

The working principle of the STP25N60M2-EP is based on the fact that the voltage applied to the gate determines the current between the source and drain. When the voltage is higher than a certain threshold, the gate acts as a switch and conducts current from the source to the drain, allowing the device to be used as a switch. Similarly, when the voltage is lower than the same threshold, the gate acts as an insulator and does not allow current to flow from the source to the drain, thus, blocking current and switching the device off.

The STP25N60M2-EP has a wide range of applications in the power electronics field, including power converters, motion control, industrial automation, solar inverters, and etc. It is also suitable for any other applications which require low power loss, high power density and efficient performance.

In conclusion, the STP25N60M2-EP is a power MOSFET with low gate charge, low output capacitance, and low on-resistance. It has small size and provides excellent thermal performance. In addition, its high accuracy switching characteristics are ideal for applications in the power electronics field.

The specific data is subject to PDF, and the above content is for reference