STP20N90K5

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STP20N90K5 Application Field and Working Principle

The STP20N90K5 is a high-performance, low on resistance (RDS(ON)), N-channel Power MOSFET device from ST Microelectronics. It is an advanced, single-channel, high-voltage, and high current MOSFET designed for applications in Automotive, Power Network, Consumer and Computing markets. The MOSFET is housed in an Industry-Standardvery small package (VSP) for low-profile, low-cost, ease of use.

The STP20N90K5 is ideally suited for switching applications, typically used as a power switch. In this application, the MOSFET is used to switch large currents and/or high voltages in a compact package. The device is often used to control the power output of a power supply or to control the speed of a motor. It can also be used in analog and digital circuit switching, in switching power supplies, and in other applications that require a high-current, high-voltage, low on resistance Mosfet.

The STP20N90K5 is composed of two parts, an N-type FET and two parasitic Schottky diodes. The FET gate controls the current flow between the drain (D) and source (S) and can be used to switch the current on and off. The diodes provide protection from reverse voltages across the device. The device is usually used in the enhancement mode, where the voltage at the gate must be raised to ensure that current flows through the MOSFET, otherwise the transistor is off. The device can also be used in the depletion mode, where a negative voltage would be applied to the gate to turn on the transistor.

The device is designed for use in high-voltage applications, up to 20V drain-source breakdown voltage. The device has a maximum drain-source voltage rating of 40V and a maximum drain current of 20A. The STP20N90K5 has a very low static on-resistance, making it an ideal choice for high-power applications. The device also exhibits excellent device behavior in terms of thermal stability and high switching speeds.

The device is manufactured using the latest semiconductor processing technologies. The process technology employed in this device features the use of the latest power CMOS process technologies. The device is designed for use in high-temperature applications and is able to operate up to a temperature of 175°C. The STP20N90K5 is rated for a maximum power dissipation of 150W, further increasing the device’s usefulness in high power and high temperature applications.

The STP20N90K5 is an ideal choice for applications in Automotive, Power Network, Consumer, and Computing markets. The device is a great choice for high-power, high-current, high-voltage applications and provides an excellent combination of high performance, low cost, and high reliability. The device is capable of switching loads up to 20A and operating at a maximum temperature of 175°C. The device is characterized by a very low static on-resistance, high switching speeds, and excellent thermal stability.

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