Allicdata Part #: | 497-7518-5-ND |
Manufacturer Part#: |
STP2NK100Z |
Price: | $ 2.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1000V 1.85A TO-220 |
More Detail: | N-Channel 1000V 1.85A (Tc) 70W (Tc) Through Hole T... |
DataSheet: | STP2NK100Z Datasheet/PDF |
Quantity: | 9983 |
1 +: | $ 2.16720 |
10 +: | $ 1.95993 |
100 +: | $ 1.57469 |
500 +: | $ 1.22477 |
1000 +: | $ 1.01481 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 499pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 8.5 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.85A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP2NK100Z is a discrete N-channel MOSFET, commonly known as a single. It is designed to provide robust power control and switching capabilities for a wide range of applications. It features a low on-state resistance and an exceptionally low input capacitance, making it suitable for high-speed switching applications such as switching power supplies and motor speed control.
The STP2NK100Z is primarily used in applications where switching speed and power efficiency are of paramount importance. In particular, this MOSFET is ideal for applications where high current needs to be switched quickly, or where very low gate-source capacitance is necessary for high speed logic signals. It can be used for power amplification, in power supply circuits, for DC-DC conversion, in switching circuits and as a sound switch. In addition, its low on-state resistance makes it an excellent choice for RF applications.
The STP2NK100Z works on the principle of metal-oxide-semiconductor field-effect transistors (MOSFET). It is the most widely used type of semiconductor transistor in the world today. A MOSFET is essentially a metal-oxide-semiconductor structure consisting of a source, a drain and a gate. When a positive voltage is applied to the gate, it forms an electrical field that attracts electrons and holes, resulting in a current flow between the source and the drain. By controlling the voltage applied to the gate, the current can be controlled.
The STP2NK100Z has a low input capacitance of 100 pF, which makes it ideal for high-speed switching applications. Additionally, it offers an impressive on-state resistance of 0.2 ohms and can handle up to 100V and 100A of continuous drain-source current. It is capable of fast switching and has a maximum current rise time of 210ns. It also offers a high-frequency operation up to 1MHz.
Overall, the STP2NK100Z is an excellent choice for a wide range of applications where power efficiency and switching speed are essential. It offers a comprehensive set of features and provides robust power control and switching capabilities. This MOSFET is consequently an essential component in any high-performance circuit design.
The specific data is subject to PDF, and the above content is for reference
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