SUD50N03-12P-E3 Allicdata Electronics
Allicdata Part #:

SUD50N03-12P-E3-ND

Manufacturer Part#:

SUD50N03-12P-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V TO252
More Detail: N-Channel 30V 6.5W (Ta), 46.8W (Tc) Surface Mount...
DataSheet: SUD50N03-12P-E3 datasheetSUD50N03-12P-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6.5W (Ta), 46.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SUD50N03-12P-E3 is an N-channel enhancement mode MOSFET which is a kind of popular semiconductor switching devices. The device is composed of a source, a drain, a gate and a substrate, and is the basic component of most integrated circuits today. It has great advantages like good immunity from surrounding environment, fast signal switching, low power loss and small size.

The application field of SUD50N03-12P-E3 is widely, it can be used in a variety of applications such as computer machinery, consumer electronics, automotive, audio systems and industrial automation. Some of the most common applications of the device are electronic gates and relays, amplifiers, transducers and sensors, and smart integrated circuits.

The working principle of SUD50N03-12P-E3 is relatively simple. When applying a voltage to the gate, a large electric field will form, which will attract electrons from the source and inject them into the channel, thus forming a conductive path between source and drain. The greater the gate voltage, the larger the electric field, and the larger the current that can pass through the device. As the voltage on the gate decreases, the amount of current flow decreases, that\'s why the device is considered a switching device.

In summary, SUD50N03-12P-E3 is a N-channel enhancement mode MOSFET and is widely used in a variety of applications, ranging from consumer electronics to industrial automation. Its working principle is relatively simple, with a voltage applied to the gate, it can switch a large current between source and drain.

The specific data is subject to PDF, and the above content is for reference

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