Allicdata Part #: | SUD50N03-12P-GE3-ND |
Manufacturer Part#: |
SUD50N03-12P-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 16.8A TO252 |
More Detail: | N-Channel 30V 16.8A (Ta) 39W (Tc) Surface Mount TO... |
DataSheet: | SUD50N03-12P-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 16.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 39W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SUD50N03-12P-GE3 is part of a class of devices referred to as SUD50N03-12P-GE3, or as Field Effect Transistors (FETs). In essence, these devices are electrically controlled switches that can open and close electronically to regulate the flow of electricity through a circuit. This particular FET is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), which has distinct advantages over its predecessors such as greater efficiency and improved heat dissipation.
The SUD50N03-12P-GE3 can be used in many applications, most notably in power conditioners, low-noise amplifiers, low-power logic drivers, and RF modulators. One of the unique features of the SUD50N03-12P-GE3 is its ability to operate under low gate voltage, making it ideal for use in low-power circuits. Additionally, the device features an attractive package size and surface mountable construction, which make it ideal for use in tight spaces.
The SUD50N03-12P-GE3 utilizes several input/output (I/O) connections to open and close the gates. The most common I/O connection is the gate input, which is used to provide the FET with the voltage required to open and close the gate. The source and drain connections are also used to control the FET, though they do not require any voltage. Instead, currents flowing through the source and drain are used to open and close the gate.
The SUD50N03-12P-GE3 can handle a wide range of currents, from very small to very large, depending on the specific application requirements. The device features an on-resistance of 2.1 ohms, a max voltage rating of 0.3 volts, and a max current rating of 600 mA. These specifications make it suitable for a variety of applications.
One of the primary advantages of the SUD50N03-12P-GE3 is its ability to dissipate heat efficiently. This is made possible through the design of the construction, as it does not require a lot of external heat sinks or other cooling components. This helps to improve reliability, as the device is able to operate with less strain on its components.
In conclusion, the SUD50N03-12P-GE3 is a highly useful device in terms of its I/O connections and performance. It is ideal for use in power conditioners, low-noise amplifiers, low-power logic drivers, and RF modulators, as well as other applications where precise control and high-performance is required. The device is also efficient in terms of power consumption, making it attractive for many power-saving applications. The reliable performance and attractive size have also helped to make the SUD50N03-12P-GE3 a popular choice for many modern electronics designs.
The specific data is subject to PDF, and the above content is for reference
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SUD50N03-11-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A TO252... |
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SUD50P08-26-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 80V 50A TO252... |
SUD50P10-43-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 38A TO25... |
SUD50N02-09P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 20A TO252... |
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SUD50P04-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A TO252... |
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SUD50P08-25L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 50A DPAKP... |
SUD50P06-15L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 50A TO252... |
SUD50P10-43L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 37.1A TO... |
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