SUD50N06-07L-GE3 Allicdata Electronics

SUD50N06-07L-GE3 Discrete Semiconductor Products

Allicdata Part #:

SUD50N06-07L-GE3TR-ND

Manufacturer Part#:

SUD50N06-07L-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 96A DPAK
More Detail: N-Channel 60V 96A (Tc) 136W (Tc) Surface Mount TO-...
DataSheet: SUD50N06-07L-GE3 datasheetSUD50N06-07L-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SUD50N06-07L-GE3 FET is a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is a single N-Channel MOSFET with a maximum drain voltage of 60V and a maximum drain current of 57A. It offers a low On-State resistance, low gate threshold voltage, and low gate input capacitance. Additionally, it offers excellent resistance to thermal aging, making it ideal for high-temperature applications such as automotive systems.

The SUD50N06-07L-GE3 FET is used in a variety of applications including power management and control, motor drive and control, and home appliance control. In each application, the FET is used to create a desired output by controlling the flow of electric charge. In power management and control applications, the FET is used to regulate power flow to various components, such as power supplies and output stages. In motor drive and control applications, the FET is used to modulate the torque and speed of a motor and provide current flow to various motors and solenoids. Finally, in home appliance control applications, the FET is used to regulate power flow to lamps, refrigerators and other home appliances.

The SUD50N06-07L-GE3 FET operates in two basic modes: the depletion mode and the enhancement mode. In the depletion mode, the drain-source current flow is reduced when the gate-to-source voltage is 0V. The drain current increases as the voltage is increased, up until the drain-source threshold voltage is attained. In the enhancement mode, the drain current is present when the gate-source voltage is 0V, and the drain current increases with an increase in the gate-source voltage.

The SUD50N06-07L-GE3 FET is designed with a low On-State resistance of 62mΩ, enabling efficient power transfer to the load. Additionally, it offers a low gate threshold voltage of 4V and a low gate input capacitance of 14pF, enabling fast switching of current flow. The FET also provides excellent resistance to thermal aging, making it ideal for high-temperature applications.

In summary, the SUD50N06-07L-GE3 FET is a single N-Channel MOSFET manufactured by STMicroelectronics. It is used in a variety of applications including power management and control, motor drive and control, and home appliance control. The FET operates in two basic modes: the depletion mode and the enhancement mode. It features a low On-State resistance, low gate threshold voltage, and low gate input capacitance and offers excellent resistance to thermal aging.

The specific data is subject to PDF, and the above content is for reference

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