SUD50N10-34P-T4-E3 Allicdata Electronics
Allicdata Part #:

SUD50N10-34P-T4-E3-ND

Manufacturer Part#:

SUD50N10-34P-T4-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 5.9A TO252
More Detail: N-Channel 100V 5.9A (Ta), 20A (Tc) 2.5W (Ta), 56W ...
DataSheet: SUD50N10-34P-T4-E3 datasheetSUD50N10-34P-T4-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 56W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 34 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SUD50N10-34P-T4-E3 is a N-channel enhancement mode field effect transistor (FET) in a PowerPAK™ SO8 package, manufactured by Infineon Technologies, offering maximum power and thermal performance. This FET type offers superior switching performance and offers good protection against electrostatic voltages up to 2000V. It is ideal for use in automotive and industrial applications.

The SUD50N10-34P-T4-E3 is a single n-channel field-effect transistor with a wide temperature range from -40 to 175°C. This FET type offers superior switching performance, superior gate charge characteristics, faster switching speed and better power ratings. The source drain rating is RDS(on) max = 10mΩ, VDS max = 50V, ID max = 7A.

The working principle of SUD50N10-34P-T4-E3 is based on an enhancement mode FET. The FET consists of four terminals; gate (G or GATE), source (S or SOURCE), drain (D or DRAIN) and body (B or BODY). The source and drain are two regions of n-type conductive material (doped silicon) which are separated by the reverse biased p-type layer. When a voltage is applied to the gate terminal, it creates an electric field which increases the conductivity of the channel between the source and drain. This device can be used for either high or low voltage switching applications.

In a low voltage switching application, the SUD50N10-34P-T4-E3 is used as an inverter. The device is connected across the supply and the load and when a low voltage is applied to the gate terminal, the device is turned on and it allows the current to flow through and turning on the load. When the voltage is removed from the gate terminal, the device is turned off and the current stops flowing.

In a high voltage switching application, the SUD50N10-34P-T4-E3 is used to switch higher voltage levels. A current limiting resistor is connected in series with the device and the load is connected across this resistor and the drain terminal of the FET. When the voltage is applied to the gate terminal, the FET is turned on and current flows through the load. When the gate voltage is removed, the device is turned off and the current stops.

The SUD50N10-34P-T4-E3 is an excellent choice for high power switch applications including low voltage power supplies, computers and telecom equipment, automotive and industrial applications. It is available in a PowerPAK™ SO8 package, offering high power, thermal and switching performance.

The specific data is subject to PDF, and the above content is for reference

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