Allicdata Part #: | SUD50N10-34P-T4-E3-ND |
Manufacturer Part#: |
SUD50N10-34P-T4-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 5.9A TO252 |
More Detail: | N-Channel 100V 5.9A (Ta), 20A (Tc) 2.5W (Ta), 56W ... |
DataSheet: | SUD50N10-34P-T4-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.9A (Ta), 20A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SUD50N10-34P-T4-E3 is a N-channel enhancement mode field effect transistor (FET) in a PowerPAK™ SO8 package, manufactured by Infineon Technologies, offering maximum power and thermal performance. This FET type offers superior switching performance and offers good protection against electrostatic voltages up to 2000V. It is ideal for use in automotive and industrial applications.
The SUD50N10-34P-T4-E3 is a single n-channel field-effect transistor with a wide temperature range from -40 to 175°C. This FET type offers superior switching performance, superior gate charge characteristics, faster switching speed and better power ratings. The source drain rating is RDS(on) max = 10mΩ, VDS max = 50V, ID max = 7A.
The working principle of SUD50N10-34P-T4-E3 is based on an enhancement mode FET. The FET consists of four terminals; gate (G or GATE), source (S or SOURCE), drain (D or DRAIN) and body (B or BODY). The source and drain are two regions of n-type conductive material (doped silicon) which are separated by the reverse biased p-type layer. When a voltage is applied to the gate terminal, it creates an electric field which increases the conductivity of the channel between the source and drain. This device can be used for either high or low voltage switching applications.
In a low voltage switching application, the SUD50N10-34P-T4-E3 is used as an inverter. The device is connected across the supply and the load and when a low voltage is applied to the gate terminal, the device is turned on and it allows the current to flow through and turning on the load. When the voltage is removed from the gate terminal, the device is turned off and the current stops flowing.
In a high voltage switching application, the SUD50N10-34P-T4-E3 is used to switch higher voltage levels. A current limiting resistor is connected in series with the device and the load is connected across this resistor and the drain terminal of the FET. When the voltage is applied to the gate terminal, the FET is turned on and current flows through the load. When the gate voltage is removed, the device is turned off and the current stops.
The SUD50N10-34P-T4-E3 is an excellent choice for high power switch applications including low voltage power supplies, computers and telecom equipment, automotive and industrial applications. It is available in a PowerPAK™ SO8 package, offering high power, thermal and switching performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SUD50N03-06AP-T4E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 90A TO252... |
SUD50N06-07L-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 96A TO252... |
SUD50P04-13L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 60A TO252... |
SUD50P10-43L-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 37.1A TO... |
SUD50N02-04P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A DPAKN... |
SUD50N02-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V DPAKN-Cha... |
SUD50N06-07L-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 96A DPAKN... |
SUD50N10-18P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 8.2A DPA... |
SUD50P04-13L-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 60A DPAKP... |
SUD50N025-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 78A TO252... |
SUD50N03-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 84A TO252... |
SUD50N03-09P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 63A TO252... |
SUD50N03-11-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A TO252... |
SUD50N03-12P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N03-16P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N03-16P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N04-05L-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 115A TO25... |
SUD50N04-16P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 9.8A TO25... |
SUD50N04-37P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V 5.4A TO25... |
SUD50N10-18P-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 8.2A TO2... |
SUD50N10-34P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.9A TO2... |
SUD50P04-23-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.2A TO25... |
SUD50P04-23-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.2A TO25... |
SUD50P04-40P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 6A TO252P... |
SUD50P08-26-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 80V 50A TO252... |
SUD50P10-43-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 38A TO25... |
SUD50N02-09P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 20A TO252... |
SUD50N03-12P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 16.8A TO2... |
SUD50P04-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A TO252... |
SUD50N02-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A TO252... |
SUD50P04-08-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A DPAKP... |
SUD50P08-25L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 50A DPAKP... |
SUD50P06-15L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 50A TO252... |
SUD50P10-43L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 37.1A TO... |
SUD50N06-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 50A TO252... |
SUD50N03-06AP-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 90A TO252... |
SUD50N03-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 63A TO252... |
SUD50NP04-77P-T4E3 | Vishay Silic... | 0.44 $ | 1000 | MOSFET N/P-CH 40V 8A TO25... |
SUD50N024-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 22V 49A TO252... |
SUD50N04-8M8P-4GE3 | Vishay Silic... | -- | 25000 | MOSFET N-CH 40V 14A TO-25... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...